(4/5) based on 14 customer reviews
Description
DATASHEET BSS123LT1G ,. BVSS123LT1G. Power MOSFET. 170 mAmps, 100 Volts. N Channel SOT 23. Features. BVSS Prefix for Automotive and Other Applications Dec 4, 2013 BSS123LT1G . HTGB. High Temperature Gate Bias. 150C, 100% Rated Vgss. 504 hr. 0/240. HTRB. High Temperature Reverse Bias. 150C Oct 3, 2007 ON Semiconductor. 2N7000RLRPG. 2N7000RLRAG. ON Semiconductor. BSS123LT3G. BSS123LT1G . ON Semiconductor. CS44005FNR44. Feb 16, 2009 BSS123LT1G . MOSFET. N-Channel. SOT-23. On Semi. 5 D1. 1. BST52C4V7-7-F . Zener Diode. 4.7V, 500mW Zener Diode SOD-123. Diode Inc BSS123LT1G . Pb-free. Halide free. Active. N-. Cha nne l. Sin gle. 100 20. 2.8. 0.1 . 7. 0.2. 25. 600. 0. 20. 9. 4. SO. T-. 23-. 3. For more information please contact
| Part Number | BSS123LT1G |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V 170MA SOT-23 |
| Series | - |
| Packaging | Cut Tape (CT) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 20pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 225mW (Ta) |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 100mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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