Part Number | BSS225H6327FTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 0.09A SOT-89 |
Series | SIPMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 90mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.3V @ 94µA |
Gate Charge (Qg) (Max) @ Vgs | 5.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 131pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 45 Ohm @ 90mA, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT89 |
Package / Case | TO-243AA |
Image |
BSS225H6327FTSA1
INFIENON
14000
0.15
MY Group (Asia) Limited
BSS225H6327FTSA1
Infinen
360000
0.9025
GITSAMDAK ELECTRONICS (HK) CO., LIMITED
BSS225H6327FTSA1
INFLNEON
1000000
1.655
ZHB Technology Co.,Ltd
BSS225H6327FTSA1
Infineon Technologies A...
6125
2.4075
Dedicate Electronics (HK) Limited
BSS225H6327FTSA1
INFINEON/IR
5000000
3.16
Hongkong Shengshi Electronics Limited