Part Number | BSS806NEH6327XTSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 20V 2.3A SOT23 |
Series | Automotive, AEC-Q101, HEXFET |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 2.5V |
Vgs(th) (Max) @ Id | 0.75V @ 11µA |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 2.5V |
Input Capacitance (Ciss) (Max) @ Vds | 529pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 500mW (Ta) |
Rds On (Max) @ Id, Vgs | 57 mOhm @ 2.3A, 2.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT23-3 |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Image |
BSS806NEH6327XTSA1
INFIENON
8918
1.74
Useta Tech (HK) Limited
BSS806NEH6327XTSA1
Infinen
4306
2.5025
Hongkong Shengshi Electronics Limited
BSS806NEH6327XTSA1
INFLNEON
8793
3.265
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSS806NEH6327XTSA1
Infineon Technologies A...
5432
4.0275
Xinnlinx Electronics Pte Ltd
BSS806NEH6327XTSA1
INFINEON/IR
9353
4.79
Z.H.T TECHNOLOGY HK LIMITED