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Description
2011-07-11. Rev 2.7. Page 1. BSS84P . SIPMOS Small-Signal-Transistor. Product Summary. V. DS. -60. V. RDS(on). 8. W. ID. -0.17 A. Feature. P-Channel . BSS84 . P-channel enhancement mode vertical DMOS transistor. Rev. 06 16 December 2008. Product data sheet. Table 1. Product overview. Type number[1]. BSS84 . Document number: DS30149 Rev. 20 - 2. 1 of 5 www.diodes.com BSS84 . P-CHANNEL ENHANCEMENT MODE MOSFET. Product Summary. V( BR) Quality Information for Product Type BSS84 . Quality and reliability data provided by NXP Semiconductors is intended to be a non-binding estimate of product. Combines MMBT4401 type transistor with BSS84 type Maximum Ratings, Q2, BSS84 P -Channel MOSFET Element @TA = 25 C unless otherwise specified.
| Part Number | BSS84P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 60V 170MA SOT-23 |
| Series | SIPMOS |
| Packaging | Tape & Reel (TR) |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 170mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Gate Charge (Qg) (Max) @ Vgs | 1.5nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 19pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 360mW (Ta) |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 170mA, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Image |  |
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