Part Number | BSZ031NE2LS5ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 25V 19A 8SON |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25V |
Current - Continuous Drain (Id) @ 25°C | 19A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18.3nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1230pF @ 12V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 3.1 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8-FL |
Package / Case | 8-PowerTDFN |
Image |
BSZ031NE2LS5ATMA1
INFIENON
2688
1.06
Shenzhen Hongying Micro Technology Co., Ltd
BSZ031NE2LS5ATMA1
Infinen
19290
2.365
Useta Tech (HK) Limited
BSZ031NE2LS5ATMA1
INFLNEON
3000
3.67
HONGKONG SINIKO ELECTRONIC LIMITED
BSZ031NE2LS5ATMA1
Infineon Technologies A...
59670
4.975
ShenZhen QiaFeng Electronics Co.,Ltd
BSZ031NE2LS5ATMA1
INFINEON/IR
48500
6.28
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED