Part Number | BSZ0500NSIATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 30A 8SON |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 30A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 52nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3400pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 69W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8-FL |
Package / Case | 8-PowerTDFN |
Image |
BSZ0500NSIATMA1
INFIENON
35800
1.79
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSZ0500NSIATMA1
Infinen
5000
2.49
Shenzhen Hongying Micro Technology Co., Ltd
BSZ0500NSIATMA1 0500NSI
INFLNEON
390
3.19
Lionfly Tech (HK) International Group Co., Limited
BSZ0500NSIATMA1
Infineon Technologies A...
3000
3.89
HONGKONG SINIKO ELECTRONIC LIMITED
BSZ0500NSIATMA1
INFINEON/IR
2000
4.59
Yingxinyuan INT'L (Group) Limited