Part Number | BSZ088N03LSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 40A TSDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 35W (Tc) |
Rds On (Max) @ Id, Vgs | 8.8 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSZ088N03LSGATMA1
INFIENON
18000
0.06
MY Group (Asia) Limited
BSZ088N03LSGATMA1
Infinen
3681
1.11
HONG KONG CHIPWAY INTERNATIONAL LIMITED
BSZ088N03MSG
INFLNEON
597
2.16
Pacific Corporation
BSZ088N03MSG
Infineon Technologies A...
3262
3.21
HK TWO L ELECTRONIC LIMITED
BSZ088N03LSG
INFINEON/IR
5000
4.26
Pivot Technology Co., Ltd.