Part Number | BSZ100N03LSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 40A TSDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1500pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 10 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSZ100N03LSGATMA1
INFIENON
35200
1.16
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSZ100N03LSGATMA1
Infinen
3648
2.2125
Shenzhen Hongying Micro Technology Co., Ltd
BSZ100N03LSGATMA1
INFLNEON
16000
3.265
Finestock Electronics HK Limited
BSZ100N03LSGATMA1
Infineon Technologies A...
220360
4.3175
Cinty Int'l (HK) Industry Co., Limited
BSZ100N03LSGATMA1
INFINEON/IR
3000
5.37
HONGKONG SINIKO ELECTRONIC LIMITED