Part Number | BSZ100N03MSGATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 40A TDSON-8 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 40A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1700pF @ 15V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 2.1W (Ta), 30W (Tc) |
Rds On (Max) @ Id, Vgs | 9.1 mOhm @ 20A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TSDSON-8 |
Package / Case | 8-PowerTDFN |
Image |
BSZ100N03MSGATMA1
INFIENON
18000
0.6
MY Group (Asia) Limited
BSZ100N03MSGATMA1
Infinen
35200
1.9725
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
BSZ100N03MSGATMA1
INFLNEON
10000
3.345
YK TECH ELECTRONIC CO., LIMITED
BSZ100N03MSGATMA1
Infineon Technologies A...
100000
4.7175
Yataitong Electronic Technology Co., Limited
BSZ100N03MSGATMA1
INFINEON/IR
5998
6.09
Huajiaxin Electronic Technology (Hong Kong) Co., Limited