Description
Jul 26, 2013 Speed TEMPFET. BTS282Z . Data Sheet. 2. Rev.1.3, 2013-07-26. Maximum Ratings. Parameter. Symbol. Value. Unit. Drain source voltage. AI AP M AE ver. 2003-07. - 7 -. B.Koeppl/ J. Kositza/ C.Arndt/ J-P. Boeschlin. 3.2.3 . BTS282Z . Max. gate voltage. 1.75. 1.85. 1.95. 2.05. 2.15. 2.25. 2.35. 2.45. 2.55. Material Content Data Sheet. Sales Product Name. BTS282Z E3180A. Issued. 29 . August 2013. MA#. MA000931510. Package. PG-TO263-7-1. Weight*. Feb 11, 2006 Page 1. 2010 China ATV Symposium. Power Devices. Page 2. Power. System ICs. Smart Power. System Integration: Embedded. Page 1. Automotive Power Selection Guide. Ultimate power perfect control www.infineon.com/automotivepower. Page 2. 2. For a comprehensive and
Part Number | BTS282Z |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 49V 80A TO-220-7 |
Series | TEMPFET |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 49V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 240µA |
Gate Charge (Qg) (Max) @ Vgs | 232nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4800pF @ 25V |
Vgs (Max) | - |
FET Feature | Temperature Sensing Diode |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 6.5 mOhm @ 36A, 10V |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO220-7-180 |
Package / Case | TO-263-8, D²ÂPak (7 Leads + Tab), TO-263CA |
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BTS282Z
INFIENON
4000
0.49
Norric Electronics (HK) Limited
BTS282Z E3180A
Infinen
5000
1.4425
Shenzhen Qiangneng Electronics Co., Ltd.
BTS282Z
INFLNEON
3550
2.395
Luobei Electronics Co., Limited
BTS282Z
Infineon Technologies A...
5876
3.3475
Analog Technology Limited
BTS282Z
INFINEON/IR
86700
4.3
Z.H.T TECHNOLOGY HK LIMITED