Description
Typische Abh ngigkeit des Grenzstromes IF(OV)M von der Anzahl f r eine Folge von Sinus. Halbwellen bei 50Hz. Parameter: R ckw rtsspannung VRM. Emitter Controlled-Diode is Infineon unique Fast Recovery Diode technology. The Ultrathin wafer and field-stop technology makes the Emitter Controlled-Diode D740N44T . 4400. 750/100. 11000. 605. 2.94/3.0. 0.85. 0.65. 39.0. 160. 10.0. 24.0 . Disc dia 58mm height 26mm / Ceramic. D740N42T. 4200. 750/100. 11000.
Part Number | D740N44T |
Brand | Infineon Technologies AG |
Image |
D740N44T
INFIENON
2050
1.83
Hgme International Co., Limited
D740N44T
Infinen
13663
2.59
Tormeka UAB
D740N44T
INFLNEON
300
3.35
Shenzhen Qiangneng Electronics Co., Ltd.
D740N44T
Infineon Technologies A...
25000
4.11
Genuine Mall (HK)Electronics Limited
D740N44T
INFINEON/IR
25
4.87
FLOWER GROUP(HK)CO.,LTD