Description
FDMC6686P : P-Channel PowerTrench MOSFET. For complete documentation, see the data sheet. This P-Channel MOSFET is produced using Fairchild Jan 13, 2017 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMC6686P . PQFN-8 (3.3X3.3) (CuBW) (G). FSCP.
Part Number | FDMC6686P |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET P-CH 20V POWER33 |
Series | PowerTrench |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 56A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 122nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 13200pF @ 10V |
Vgs (Max) | ±8V |
FET Feature | - |
Power Dissipation (Max) | 2.3W (Ta), 40W (Tc) |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 18A, 4.5V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-PQFN (3.3x3.3), Power33 |
Package / Case | 8-PowerWDFN |
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