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Description
Jul 7, 2016 FDMS86163P . PQFN-8 (Al. Ribbon) (G). Jul 07, 2016. 1.0. FSCP. 0.108004 g. Each. Manufacturing Process Information. Terminal Finish. Jan 28, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FDMS86163P . PQFN-8 (Al Ribbon) (G). FSCP. FSCP. FDMS86163P . 5. 4. 1. 2. 3. 6. 7. 8. C21. 180pF. 50V. C40. 47uF. 10V. R58. 10K. C39. 2.2uF. 100V. R46. 59K. R61. 10. D7. DFLS1100. D5. DFLS1100. R60. Feb 3, 2016 A. LM5. DNP MMZ1608S121AT. A. C74. 1uF/50V 10%. A. L5. DNP 744272222. C. 1. 4. 2. 3. R264. 8.2K 1% B. Q7. FDMS86163P . C. 4. 3. 7 6 5.
| Part Number | FDMS86163P |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET P-CH 100V 7.9A POWER56 |
| Series | PowerTrench |
| Packaging | |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta), 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 59nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4085pF @ 50V |
| Vgs (Max) | ±25V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
| Rds On (Max) @ Id, Vgs | 22 mOhm @ 7.9A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-PQFN (5x6), Power56 |
| Package / Case | 8-PowerTDFN |
| Image |  |
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