Part Number | FF200R12KT4HOSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Modules |
Brand | Infineon Technologies AG |
Description | IGBT MODULE 1200V 200A |
Series | C |
IGBT Type | Trench Field Stop |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 320A |
Power - Max | 1100W |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 200A |
Current - Collector Cutoff (Max) | 5mA |
Input Capacitance (Cies) @ Vce | 14nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Image |
FF200R12KT4HOSA1
INFIENON
16000
1.79
Finestock Electronics HK Limited
FF200R12KT4HOSA1
Infinen
2688
2.76
Shenzhen Hongying Micro Technology Co., Ltd
FF200R12KT4HOSA1
INFLNEON
5000
3.73
XINYUN ELECTRONICS COMPANY LIMITED
FF200R12KT4HOSA1
Infineon Technologies A...
220360
4.7
Cinty Int'l (HK) Industry Co., Limited
FF200R12KT4HOSA1
INFINEON/IR
11080
5.67
N&S Electronic Co., Limited