(5/5) based on 10 customer reviews
Description
DATASHEET Purposes, 1/8 from case for 5 seconds. 300. oC. Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature. FGA40N65SMD . 650 V, 40 A Field FGA40N65SMD . FGA40N65SMD . TO3PN-3. Jul 18, 2016. 1.0. FSSZ. 5.43465 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. Jul 18, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FGA40N65SMD . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. FGA40N65sMd . 650. 40. 1.9. 13. Yes to-3PN. FGA60N65sMd. 650. 60. 1.9. 50. Yes to-3PN. FGH75t65uPd*. 650. 75. 1.65. . Yes to-247. FGA50N100BNtd2.
| Part Number | FGA40N65SMD |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 650V 80A 349W TO3P |
| Series | - |
| Packaging | Tube |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 120A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
| Power - Max | 349W |
| Switching Energy | 820µJ (on), 260µJ (off) |
| Input Type | Standard |
| Gate Charge | 119nC |
| Td (on/off) @ 25°C | 12ns/92ns |
| Test Condition | 400V, 40A, 6 Ohm, 15V |
| Reverse Recovery Time (trr) | 42ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
| Image |  |
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