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Description
DATASHEET FGA60N65SMD . 650 V, 60 A Field Stop IGBT. Features. Maximum Junction Temperature : TJ = 175oC. Positive Temperature Co-efficient for Easy Parallel Jan 8, 2016 Mfr Item Number. Mfr Item Name. Effective Date. FSC Version. Manufacturing Site . Weight*. UOM. Unit Type. FGA60N65SMD . FGA60N65SMD . Jan 8, 2016 Material Declaration. Site Owner. Assembly. Location. Package. Weight(g). MSL. Rating. FGA60N65SMD . TO3PN-3. FSSZ. FSSZ. 5.43465. NA. FGA60N65sMd . 650. 60. 1.9. 50. Yes to-3PN. FGH75t65uPd*. 650. 75. 1.65. . Yes to-247. FGA50N100BNtd2. 1000. 35. 2.5. 65. Yes to-3PN. FGH40t100sMd*.
| Part Number | FGA60N65SMD |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 650V 120A 600W TO3P |
| Series | - |
| Packaging | Tube |
| IGBT Type | Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 650V |
| Current - Collector (Ic) (Max) | 120A |
| Current - Collector Pulsed (Icm) | 180A |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 60A |
| Power - Max | 600W |
| Switching Energy | 1.54mJ (on), 450µJ (off) |
| Input Type | Standard |
| Gate Charge | 189nC |
| Td (on/off) @ 25°C | 18ns/104ns |
| Test Condition | 400V, 60A, 3 Ohm, 15V |
| Reverse Recovery Time (trr) | 47ns |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3P-3, SC-65-3 |
| Supplier Device Package | TO-3PN |
| Image |  |
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