Part Number | FQP32N20C |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 200V 28A TO-220 |
Series | QFET |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2200pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 82 mOhm @ 14A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Image |
FQP32N20C
INFIENON
4806
1.18
TLF ELECTRONICS LTD
FQP32N20C
Infinen
6895
2.1875
HK HEQING ELECTRONICS LIMITED
FQP32N20C
INFLNEON
564
3.195
Ande Electronics Co., Limited
FQP32N20C
Infineon Technologies A...
1809
4.2025
SUMMER TECH(HK) LIMITED
FQP32N20C
INFINEON/IR
6143
5.21
CIS Ltd (CHECK IC SOLUTION LIMITED)