Description
Dec 6, 2016 FZ1000R33HE3 . IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode. IHM-B module with fast Trench/Fieldstop 2016 12 6 FZ1000R33HE3 . IGBT- / IGBT,Inverter. / Maximum Rated Values. . Collector-emitter voltage. Tvj = -40 2016 12 6 FZ1000R33HE3 . IGBT, / IGBT,Inverter. / Maximum Rated Values. . Collector-emitter voltage. Tvj = -40 C. FZ1000R33HE3 . Single Switch. 3300V. 1000A. IHV B 130mm. DD500S33HE3. Dual Diode. 3300V. 500A. IHV B 130mm. DD1000S33HE3. Dual Diode. 3300V. Dec 6, 2016 800 g. Dynamische Daten gelten in Verbindung mit FZ1000R33HE3 Modul. Dynamic Data valid in conjunction with FZ1000R33HE3 module.
Part Number | FZ1000R33HE3 |
Brand | Infineon Technologies AG |
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