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Description
DATASHEET 1200V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode. 1. Technische Information / Technical Information. FZ800R12KL4C . FZ800R12KL4C . IGBT- . IGBT-modules prepared by: DTS approved by: TS date of publication: 2013-10-02 revision: 3.1. Diode / Diode 1200V IGBT Module with low loss IGBT of 2nd generation and soft Emitter Controlled Diode. 1. / Technical Information. FZ800R12KL4C . IGBT- . FZ800R12KL4C . 1200. 800. 2,1. 121/127. 0,022 H_IH1/99. FZ1200R12KL4C. 1200. 1200. 2,1. 165/195. 0,016 H_IH1/99. FZ1600R12KL4C. 1200. 1600. 2,1.
| Part Number | FZ800R12KL4C |
| Brand | Infineon Technologies AG |
| Image |  |
FZ800R12KL4C
INFIENON
100
1.33
Wanzhong Mechanical & Electrical Equipment Limited
FZ800R12KL4C
Infinen
4617
2.0475
JINMAO KECHUANG (ASIA) CO., LIMITED
FZ800R12KL4C
INFLNEON
652
2.765
BeiJing Jietuozijing Science and Technology Co., Ltd.
FZ800R12KL4C
Infineon Technologies A...
50
3.4825
S.E. Components
FZ800R12KL4C po
INFINEON/IR
11528
4.2
CIS Ltd (CHECK IC SOLUTION LIMITED)
