Infineon Technologies AG

Description

IKB20N60H3. 600. Y. 20 100. D2PAK (TO-263) Hard. HighSpeed 3. 20. 1.95. 0.24. 0.45. 390. IKP20N60H3. 600. Y. 20 100. TO-220. Hard. HighSpeed 3. 20. IGBT Fundamentals. The Insulated Gate Bipolar Transistor (IGBT) is a minority- carrier device with high input impedance and large bipolar current-carrying 1 Introduction. This application note describes how to use the. Freescale PT60 8- bit MCU to develop a complete induction cooker as a quick start reference 1.1 Structure. The IGBT combines in it all the advantages of the bipolar and MOS field effect transistor. As can be seen from the structures shown below, the only Oct 5, 2016 TC=25 C. 25. A. TC=80 C. 15. A. ICM. Repetitive Peak Collector Current tp=1ms. 30. A. Ptot. Power Dissipation Per IGBT. 105. W. Diode.