Part Number | HGT1S10N120BNS |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 35A 298W TO263AB |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298W |
Switching Energy | 320µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Image |
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