Description
HGT1S10N120BNST is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies. Features. 17A, 1200V, TC = 110 C.
Part Number | HGT1S10N120BNST |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 35A 298W TO263AB |
Series | - |
Packaging | Cut Tape (CT) |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 35A |
Current - Collector Pulsed (Icm) | 80A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
Power - Max | 298W |
Switching Energy | 320µJ (on), 800µJ (off) |
Input Type | Standard |
Gate Charge | 100nC |
Td (on/off) @ 25°C | 23ns/165ns |
Test Condition | 960V, 10A, 10 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | TO-263AB |
Image |
Hot Offer
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