(5/5) based on 15 customer reviews
Description
The HGTG12N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is Jan 13, 2017 HGTG12N60A4D . TO247-3 (G).CSV. FSSZ. FSSZ. 5.456925. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Oct 31, 2003 ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or turn-off loss (Eoff) and turn- on loss (Eon) expressions are described in equations. (15) (17) for typical performance of the. HGTG12N60A4D IGBT [3]. ( ). Nov 16, 2007 HGTG12N60A4D . Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTG12N60A4_NL. HGTG12N60A4. Fairchild Semiconductor.
| Part Number | HGTG12N60A4D |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 600V 54A 167W TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 54A |
| Current - Collector Pulsed (Icm) | 96A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Power - Max | 167W |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Input Type | Standard |
| Gate Charge | 78nC |
| Td (on/off) @ 25°C | 17ns/96ns |
| Test Condition | 390V, 12A, 10 Ohm, 15V |
| Reverse Recovery Time (trr) | 30ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Image |  |
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