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Description
HGTG30N60A4D . HGTG30N60A4D . TO247-3. Jul 18, 2016. 1.0. FSSZ. 5.456725 g. Each. Manufacturing Process Information. Terminal Finish. Base Alloy. HGTG30N60A4D : 600V, SMPS IGBT. For complete documentation, see the data sheet. The HGTG30N60A4D is a MOS gated high voltage switching devices Jan 13, 2017 HGTG30N60A4D . TO247-3. FSSZ. FSSZ. 5.456725. NA. Terminal. Finish. Base Alloy. Green Status. Reflow Cycles. Max Time at. Temp. Peak. Page 1. POWER SOLUTIONS. Energy-efficient power analog, power discrete, and optoelectronic solutions that maximize energy savings in power sensitive TO-247-. 3LD. HGTG30N60A4. Pb-free. Active. 600V, SMPS IGBT. 60. 1.8. No. TO-247-. 3LD. HGTG30N60A4D . Pb-free. Halide free. Active. 600V, SMPS IGBT.
| Part Number | HGTG30N60A4D |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 600V 75A 463W TO247 |
| Series | - |
| Packaging | Tube |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600V |
| Current - Collector (Ic) (Max) | 75A |
| Current - Collector Pulsed (Icm) | 240A |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 30A |
| Power - Max | 463W |
| Switching Energy | 280µJ (on), 240µJ (off) |
| Input Type | Standard |
| Gate Charge | 225nC |
| Td (on/off) @ 25°C | 25ns/150ns |
| Test Condition | 390V, 30A, 3 Ohm, 15V |
| Reverse Recovery Time (trr) | 55ns |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247-3 |
| Image |  |
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