Description
DATASHEET Nov 16, 2007 Fairchild Semiconductor. May 16, 2008. November 16, 2008. HGTP5N120BND_NL. HGTP5N120BND . Fairchild Semiconductor. May 16, 2008 .
Part Number | HGTP5N120BND |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 1200V 21A 167W TO220AB |
Series | - |
Packaging | Tube |
IGBT Type | NPT |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 21A |
Current - Collector Pulsed (Icm) | 40A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 5A |
Power - Max | 167W |
Switching Energy | 450µJ (on), 390µJ (off) |
Input Type | Standard |
Gate Charge | 53nC |
Td (on/off) @ 25°C | 22ns/160ns |
Test Condition | 960V, 5A, 25 Ohm, 15V |
Reverse Recovery Time (trr) | 65ns |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220AB |
Image |
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