Description
IC DDR SDRAM 512M 200MHZ 66TSOP Series: - Format - Memory: RAM Memory Type: DDR SDRAM Memory Size: 512M (64M x 8) Speed: 200MHz Interface: Parallel Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0~C ~ 70~C Package / Case: 66-TSSOP (0.400, 10.16mm Width) Supplier Device Package: 66-TSOP II
Part Number | HYB25D512800CE-5 |
Main Category | Integrated Circuits (ICs) |
Sub Category | Memory |
Brand | Infineon Technologies AG |
Description | IC SDRAM 512MBIT 200MHZ 66TSOP |
Series | - |
Packaging | Tape & Reel (TR) |
Memory Type | Volatile |
Memory Format | DRAM |
Technology | SDRAM - DDR |
Memory Size | 512Mb (64M x 8) |
Clock Frequency | 200MHz |
Write Cycle Time - Word, Page | - |
Access Time | - |
Memory Interface | Parallel |
Voltage - Supply | 2.3 V ~ 2.7 V |
Operating Temperature | 0°C ~ 70°C (TA) |
Mounting Type | Surface Mount |
Package / Case | 66-TSSOP (0.400", 10.16mm Width) |
Supplier Device Package | 66-TSOP II |
Image |
HYB25D512800CE-5
INFIENON
2417
0.06
BENETEK LIMITED
HYB25D512800CE-5
Infinen
500
1.1625
HK HEQING ELECTRONICS LIMITED
HYB25D512800CE-5
INFLNEON
574
2.265
Yu Hong Technologies Limited
HYB25D512800CE-5
Infineon Technologies A...
330
3.3675
Dan-Mar Components Inc.
HYB25D512800CE-5
INFINEON/IR
100
4.47
RX ELECTRONICS LIMITED