Description
DIODE GEN PURP 600V 52.3A TO263 Series: - Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 52.3A (DC) Voltage - Forward (Vf) (Max) @ If: 2V @ 30A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: PG-TO263-3-2 Operating Temperature - Junction: -40~C ~ 175~C
Part Number | IDB30E60ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE GEN PURP 600V 52.3A TO263 |
Series | - |
Packaging | Tape & Reel (TR) |
Diode Type | Standard |
Voltage - DC Reverse (Vr) (Max) | 600V |
Current - Average Rectified (Io) | 52.3A (DC) |
Voltage - Forward (Vf) (Max) @ If | 2V @ 30A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | 126ns |
Current - Reverse Leakage @ Vr | 50µA @ 600V |
Capacitance @ Vr, F | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Supplier Device Package | PG-TO263-3-2 |
Operating Temperature - Junction | -40°C ~ 175°C |
Image |
IDB30E60ATMA1
INFIENON
30000
1.66
Shenzhen Tongxin Win-Win Technology Co., Ltd
IDB30E60ATMA1
Infinen
18000
2.9925
MY Group (Asia) Limited
IDB30E60ATMA1
INFLNEON
1410
4.325
Yingxinyuan INT'L (Group) Limited
IDB30E60ATMA1
Infineon Technologies A...
1893
5.6575
KDH SEMICONDUCTOR CO., LIMITED
IDB30E60ATMA1
INFINEON/IR
1893
6.99
Kingstone Electron Limited