Description
DIODE SCHOTTKY 1200V 10A TO220-2 Series: thinQ!? Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: Fast Recovery = 200mA (Io) Capacitance @ Vr, F: 525pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-1 Operating Temperature - Junction: -55~C ~ 175~C
Part Number | IDH10G120C5XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE SCHOTTKY 1200V 10A TO220-2 |
Series | thinQ! |
Packaging | Silicon Carbide Schottky |
Diode Type | Tube |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 10A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 62µA @ 1200V |
Capacitance @ Vr, F | 525pF @ 1V, 1MHz |
Mounting Type | Through Hole |
Package / Case | TO-220-2 |
Supplier Device Package | PG-TO220-2-1 |
Operating Temperature - Junction | -55°C ~ 175°C |
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