Description
DIODE SCHTKY 1200V 38A PGTO252-2 Series: thinQ!? Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V (1.2kV) Current - Average Rectified (Io): 38A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A Speed: No Recovery Time > 500mA (Io) Capacitance @ Vr, F: 29pF @ 800V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-2 Operating Temperature - Junction: -55~C ~ 150~C
Part Number | IDM10G120C5XTMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Diodes - Rectifiers - Single |
Brand | Infineon Technologies AG |
Description | DIODE SCHTKY 1200V 38A PGTO252-2 |
Series | thinQ! |
Packaging | Silicon Carbide Schottky |
Diode Type | Cut Tape (CT) |
Voltage - DC Reverse (Vr) (Max) | 1200V (1.2kV) |
Current - Average Rectified (Io) | 38A (DC) |
Voltage - Forward (Vf) (Max) @ If | 1.8V @ 10A |
Speed | No Recovery Time > 500mA (Io) |
Reverse Recovery Time (trr) | 0ns |
Current - Reverse Leakage @ Vr | 62µA @ 12V |
Capacitance @ Vr, F | 29pF @ 800V, 1MHz |
Mounting Type | Surface Mount |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package | PG-TO252-2 |
Operating Temperature - Junction | -55°C ~ 150°C |
Image |
IDM10G120C5XTMA1
INFIENON
10
1.3
TLF ELECTRONICS LTD
IDM10G120C5XTMA1
Infinen
20000
2.2975
YK TECH ELECTRONIC CO., LIMITED
IDM10G120C5XTMA1
INFLNEON
5000
3.295
Shenzhen Qiangneng Electronics Co., Ltd.
IDM10G120C5XTMA1
Infineon Technologies A...
1000
4.2925
STH Electronics Co.,Ltd
IDM10G120C5XTMA1
INFINEON/IR
100000
5.29
Yataitong Electronic Technology Co., Limited