(4/5) based on 18 customer reviews
Description
Nov 26, 2014 recommended in combination with SiC Diode IDH15S120. IGW40N120H3 . 1200V high speed switching series third generation. Data sheet. Material Content Data Sheet. Sales Product Name. IGW40N120H3 . Issued. 29. August 2013. MA#. MA000983792. Package. PG-TO247-3-41. Weight*. 6050.35 Aug 20, 2015 strongly on module design and mounting technology and can therefore not be specified for a bare die. Application example. IGW40N120H3 . 1200V. 15. 60. 217. 105. 2.05. 2.7. IGW15N120H3. Now. 25. 75. 326. 156. 2.05. 2.7. IGW25N120H3. Now. 40. 160. 483. 220. 2.05. 2.7. IGW40N120H3 . Now. 15. IGW40N120H3 . IKW40N120H3. Single chip. Duo-pak. TO247. TO247. 1200. 80. 40. 2.70. 7.0. 10. 5.8. Table 1.1: HS 1200V Product Family. The product family is
| Part Number | IGW40N120H3 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - IGBTs - Single |
| Brand | Infineon Technologies AG |
| Description | IGBT 1200V 80A 483W TO247-3 |
| Series | TrenchStop |
| Packaging | Tube |
| IGBT Type | Trench Field Stop |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 80A |
| Current - Collector Pulsed (Icm) | 160A |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 40A |
| Power - Max | 483W |
| Switching Energy | 3.16mJ |
| Input Type | Standard |
| Gate Charge | 185nC |
| Td (on/off) @ 25°C | 30ns/290ns |
| Test Condition | 600V, 40A, 12 Ohm, 15V |
| Reverse Recovery Time (trr) | - |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| Image |  |
IGW40N120H3
INFIENON
4800
1.57
Shenzhen Senli Technology Co., Ltd
IGW40N120H3
Infinen
2688
2.515
Shenzhen Hongying Micro Technology Co., Ltd
IGW40N120H3
INFLNEON
10210
3.46
UCAN TRADE (HK) LIMITED
IGW40N120H3
Infineon Technologies A...
11240
4.405
CIS Ltd (CHECK IC SOLUTION LIMITED)
IGW40N120H3
INFINEON/IR
175484
5.35
Kunlida Electronics (HK) Limited
