Part Number | IKW30N65ES5XKSA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - IGBTs - Single |
Brand | Infineon Technologies AG |
Description | IGBT 650V 30A FAST DIODE TO247-3 |
Series | TrenchStop |
Packaging | Trench |
IGBT Type | Tube |
Voltage - Collector Emitter Breakdown (Max) | 650V |
Current - Collector (Ic) (Max) | 62A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 15V, 30A |
Power - Max | 188W |
Switching Energy | 560µJ (on), 320µJ (off) |
Input Type | Standard |
Gate Charge | 70nC |
Td (on/off) @ 25°C | 17ns/124ns |
Test Condition | 400V, 30A, 13 Ohm, 15V |
Reverse Recovery Time (trr) | 75ns |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | PG-TO247-3 |
Image |
IKW30N65ES5XKSA1
INFIENON
60000
1.75
Useta Tech (HK) Limited
IKW30N65ES5XKSA1
Infinen
2688
2.4725
Shenzhen Hongying Micro Technology Co., Ltd
IKW30N65ES5XKSA1
INFLNEON
720
3.195
HK HEQING ELECTRONICS LIMITED
IKW30N65ES5XKSA1
Infineon Technologies A...
100000
3.9175
Wonston Electronics Limited
IKW30N65ES5XKSA1
INFINEON/IR
9600
4.64
Shenzhen Qiangneng Electronics Co., Ltd.