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Description
Datasheet 3. Material Content Data Sheet. Sales Product Name. IPA60R125C6 . Issued. 20. May 2016. MA#. MA001369658. Package. PG-TO220-3-313. Weight*. 2235.91 IPA60R125C6 . IPW60R125C6. 99. IPB60R099C6. IPP60R099C6. IPA60R099C6. IPW60R099C6. 70. IPW60R070C6. 41. IPW60R041C6. 600V CoolMOS E6 IPA60R125C6 . IPW60R125C6. 99. IPB60R099C6. IPP60R099C6. IPA60R099C6. IPW60R099C6. 74. IPP60R074C6. 70. IPW60R070C6. 41. IPW60R041C6. IPA60R125C6 . IPW60R125C6. 160. IPP60R160C6. IPB60R160C6. IPA60R160C6. IPW60R160C6. 190. IPP60R190C6. IPI60R190C6. IPB60R190C6.
| Part Number | IPA60R125C6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 600V 30A TO220-FP |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 960µA |
| Gate Charge (Qg) (Max) @ Vgs | 96nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2127pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 34W (Tc) |
| Rds On (Max) @ Id, Vgs | 125 mOhm @ 14.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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