(5/5) based on 14 customer reviews
Description
IPA60R280C6 . Issued. 18. February 2016. MA#. MA001486316. Package. PG- TO220-3-317. Weight*. 2107.03 mg. Construction Element. Material Group. MONTH 2015 www.taiwansemi.com. NEW PRODUCT. ANNOUNCEMENT. TSC. Package. Infineon. STM. TSM60N260. ITO-220. IPA60R280C6 . STF18NM60N. IPI60R280C6. IPB60R280C6. IPP60R280C6. IPA60R280C6 . IPW60R280C6. 190. IPI60R190C6. IPB60R190C6. IPP60R190C6. IPA60R190C6. IPW60R190C6. IPP60R190C6. IPI60R190C6. IPB60R190C6. IPA60R190C6. IPW60R190C6. 280. IPP60R280C6. IPI60R280C6. IPB60R280C6. IPA60R280C6 . IPW60R280C6.
| Part Number | IPA60R280C6 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 600V 13.8A TO220-FP |
| Series | CoolMOS |
| Packaging | Tube |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 430µA |
| Gate Charge (Qg) (Max) @ Vgs | 43nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 950pF @ 100V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Rds On (Max) @ Id, Vgs | 280 mOhm @ 6.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO-220-FP |
| Package / Case | TO-220-3 Full Pack |
| Image |  |
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