Part Number | IPB016N06L3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 60V 180A TO263-7 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 196µA |
Gate Charge (Qg) (Max) @ Vgs | 166nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | 28000pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 1.6 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab) |
Image |
IPB016N06L3
INFIENON
5464
0.98
Useta Tech (HK) Limited
IPB016N06L3
Infinen
5539
1.79
HK HEQING ELECTRONICS LIMITED
IPB016N06L3 G
INFLNEON
2774
2.6
Shenzhen Qiangneng Electronics Co., Ltd.
IPB016N06L3 G
Infineon Technologies A...
749
3.41
Redstar Electronic Limited
IPB016N06L3 G
INFINEON/IR
2518
4.22
Yingxinyuan INT'L (Group) Limited