Part Number | IPB019N08N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 80V 180A TO263-7 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 206nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14200pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 1.9 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab) |
Image |
IPB019N08N3 G
INFIENON
6000
1.85
Shenzhen Qiangneng Electronics Co., Ltd.
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Infinen
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CIS Ltd (CHECK IC SOLUTION LIMITED)
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INFLNEON
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N&S Electronic Co., Limited
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Infineon Technologies A...
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FLOWER GROUP(HK)CO.,LTD
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