Part Number | IPB03N03LB |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 30V 80A TO-263 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 59nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 7624pF @ 15V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 150W (Tc) |
Rds On (Max) @ Id, Vgs | 2.8 mOhm @ 55A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB03N03LB
INFIENON
882
0.17
Finestock Electronics HK Limited
IPB03N03LB
Infinen
2733
1.0775
Bonase Electronics (HK) Co., Limited
IPB03N03LB
INFLNEON
1446
1.985
MY Group (Asia) Limited
IPB03N03LB
Infineon Technologies A...
4267
2.8925
Yingxinyuan INT'L (Group) Limited
IPB03N03LB G
INFINEON/IR
3256
3.8
G Trader Limited