Part Number | IPB100N06S3L-04 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 55V 100A TO-263 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.2V @ 150µA |
Gate Charge (Qg) (Max) @ Vgs | 362nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 17270pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Rds On (Max) @ Id, Vgs | 3.5 mOhm @ 80A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB100N06S3L-04
INFIENON
1000
1.75
MY Group (Asia) Limited
IPB100N06S3L-04
Infinen
10000
2.7125
XINDAYI TRADING LIMITED
IPB100N06S3L-04
INFLNEON
16000
3.675
Finestock Electronics HK Limited
IPB100N06S3L-04
Infineon Technologies A...
784
4.6375
HK HEQING ELECTRONICS LIMITED
IPB100N06S3L-04
INFINEON/IR
2400
5.6
Yingxinyuan INT'L (Group) Limited