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Description
Feb 11, 2008 IPB100N10S3 - 05 . IPI100N10S3-05, IPP100N10S3-05. OptiMOS -T Power- Transistor. Features. N-channel - Enhancement mode. 1. 2. 3. Material Content Data Sheet. Sales Product Name. IPB100N10S3 - 05 . Issued. 29. August 2013. MA#. MA000389808. Package. PG-TO263-3-2. Weight* . IPD90N04S4-05 IPD75N04S4-06 IPD50N04S4-08. * IPD50N04S4-10 IPP120N10S4-03 IPI120N10S4-03 IPB120N10S4-05 . 100V NL. * IPB100N10S3 - 05 . IPB100N10S3 - 05 . N-channel 100V MOSFET, optimized for high current motor applications. TLE499x. Linear hall sensor family for current sensing. TLE5012B. 2.0 4.0. 150. Normal. Gen 10.7. TO-247. IPB100N10S3 - 05 . 4.80. 100. 0.50. 2.0 4.0. 135. Normal. OptiMOS T. TO263-3. IPB120N10S4-05. 5.00. 120. 0.80.
| Part Number | IPB100N10S305 |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Single |
| Brand | Infineon Technologies AG |
| Description | MOSFET N-CH 100V 100A TO263-3 |
| Series | OptiMOS |
| Packaging | |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Vgs(th) (Max) @ Id | 4V @ 240µA |
| Gate Charge (Qg) (Max) @ Vgs | 176nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 11570pF @ 25V |
| Vgs (Max) | - |
| FET Feature | - |
| Power Dissipation (Max) | 300W (Tc) |
| Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 100A, 10V |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 |
| Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
| Image |  |
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