Part Number | IPB120N04S401ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 120A TO263-3-2 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 176nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 188W (Tc) |
Rds On (Max) @ Id, Vgs | 1.5 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
Hot Offer
IPB120N04S401ATMA1
INFINEON/IR
80000
5.14
Shenzhen Fuxinwei Semiconductor Co., Ltd
IPB120N04S401ATMA1
INFIENON
55300
0.95
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB120N04S401ATMA1
Infinen
18000
1.9975
MY Group (Asia) Limited
IPB120N04S401ATMA1
INFLNEON
154
3.045
Dan-Mar Components Inc.
IPB120N04S401ATMA1
Infineon Technologies A...
27601
4.0925
Ande Electronics Co., Limited