Part Number | IPB123N10N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 100V 58A TO263-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 94W (Tc) |
Rds On (Max) @ Id, Vgs | 12.3 mOhm @ 46A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB123N10N3 G
INFIENON
6000
1.65
Shenzhen Qiangneng Electronics Co., Ltd.
IPB123N10N3 G
Infinen
10000
2.485
Shenzhen Taochip Electronic Co.,Ltd
IPB123N10N3 G
INFLNEON
66151
3.32
ATLANTIC TECHNOLOGY LIMITED
IPB123N10N3
Infineon Technologies A...
9645
4.155
Yingxinyuan INT'L (Group) Limited
IPB123N10N3
INFINEON/IR
20654
4.99
CIS Ltd (CHECK IC SOLUTION LIMITED)