Part Number | IPB144N12N3 G |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 120V 56A TO263-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 56A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 61µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3220pF @ 60V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 107W (Tc) |
Rds On (Max) @ Id, Vgs | 14.4 mOhm @ 56A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB144N12N3 G
INFIENON
16000
0.93
Finestock Electronics HK Limited
IPB144N12N3 G
Infinen
6000
1.9975
Shenzhen Qiangneng Electronics Co., Ltd.
IPB144N12N3 G
INFLNEON
1533
3.065
Yingxinyuan INT'L (Group) Limited
IPB144N12N3 G
Infineon Technologies A...
33400
4.1325
N&S Electronic Co., Limited
IPB144N12N3 G
INFINEON/IR
2000
5.2
ANCHIP TECHNOLOGY CO., LIMITED