Part Number | IPB180N04S401ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 40V 180A TO263-7-3 |
Series | OptiMOS |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 140µA |
Gate Charge (Qg) (Max) @ Vgs | 176nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 188W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab), TO-263CB |
Image |
IPB180N04S401ATMA1
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6028
0.78
Shenzhenshi Zhongyiyingtong Technology Co.,Ltd
IPB180N04S401ATMA1
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Finestock Electronics HK Limited
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Dedicate Electronics (HK) Limited
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