Part Number | IPB180N10S403ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO263-7 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.5V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10120pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 3.3 mOhm @ 100A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7-3 |
Package / Case | TO-263-7, D²ÂPak (6 Leads + Tab) |
Image |
Hot Offer
IPB180N10S403ATMA1
INFIENON
267
1.45
WALTON ELECTRONICS CO., LIMITED
IPB180N10S403ATMA1
Infinen
10000
2.4825
Hong Kong Huoji Electronics Co., Limited
IPB180N10S403ATMA1
INFLNEON
5242
3.515
Dedicate Electronics (HK) Limited
IPB180N10S403ATMA1
Infineon Technologies A...
16000
4.5475
Finestock Electronics HK Limited
IPB180N10S403ATMA1
INFINEON/IR
1000
5.58
MY Group (Asia) Limited