Part Number | IPB35N10S3L26ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO263-3 |
Series | Automotive, AEC-Q101, OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.4V @ 39µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2700pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 71W (Tc) |
Rds On (Max) @ Id, Vgs | 26.3 mOhm @ 35A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB35N10S3L26ATMA1
INFIENON
8620
0.93
Finestock Electronics HK Limited
IPB35N10S3L26ATMA1
Infinen
5044
2.1125
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB35N10S3L26ATMA1
INFLNEON
7044
3.295
Cinty Int'l (HK) Industry Co., Limited
IPB35N10S3L26ATMA1
Infineon Technologies A...
9287
4.4775
Senyes Electronic (HK) Limited
IPB35N10S3L26ATMA1
INFINEON/IR
1966
5.66
CIS Ltd (CHECK IC SOLUTION LIMITED)