Part Number | IPB407N30NATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH TO263-3 |
Series | OptiMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 300V |
Current - Continuous Drain (Id) @ 25°C | 44A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 87nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7180pF @ 100V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 40.7 mOhm @ 44A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB407N30NATMA1
INFIENON
33800
1.62
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB407N30NATMA1
Infinen
3000
2.6225
HONGKONG SINIKO ELECTRONIC LIMITED
IPB407N30NATMA1
INFLNEON
3600
3.625
Hongkong Yunling Electronics Co.,Limited
IPB407N30NATMA1 407N30N
Infineon Technologies A...
11264
4.6275
N&S Electronic Co., Limited
IPB407N30NATMA1
INFINEON/IR
13000
5.63
CIS Ltd (CHECK IC SOLUTION LIMITED)