Part Number | IPB60R180C7ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V TO263-3 |
Series | * |
Packaging | - |
FET Type | - |
Technology | - |
Drain to Source Voltage (Vdss) | - |
Current - Continuous Drain (Id) @ 25°C | - |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | - |
Mounting Type | - |
Supplier Device Package | - |
Package / Case | - |
Image |
IPB60R180C7ATMA1
INFIENON
65500
0.61
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB60R180C7ATMA1
Infinen
1000
2.1025
MY Group (Asia) Limited
IPB60R180C7ATMA1
INFLNEON
3000
3.595
Hongkong Yunling Electronics Co.,Limited
IPB60R180C7ATMA1
Infineon Technologies A...
92325
5.0875
Hlinsemi Electronics (HongKong) Co., Limited
IPB60R180C7ATMA1
INFINEON/IR
12000
6.58
Ande Electronics Co., Limited