Part Number | IPB60R190C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 20.2A TO263 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 630µA |
Gate Charge (Qg) (Max) @ Vgs | 63nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 151W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 9.5A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB60R190C6
INFIENON
8086
0.98
Useta Tech (HK) Limited
IPB60R190C6
Infinen
8813
2.005
HK HEQING ELECTRONICS LIMITED
IPB60R190C6
INFLNEON
9040
3.03
Shenzhen Tecrutter Technology Co. , Ltd.
IPB60R190C6
Infineon Technologies A...
2988
4.055
WIDEY INTERNATIONAL LIMITED
IPB60R190C6
INFINEON/IR
1987
5.08
KWANGHUA TECHNOLOGY LIMITED