Part Number | IPB60R600C6 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 600V 7.3A TO263 |
Series | CoolMOS |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 7.3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 20.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 63W (Tc) |
Rds On (Max) @ Id, Vgs | 600 mOhm @ 2.4A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB60R600C6
INFIENON
2688
0.24
Shenzhen Hongying Micro Technology Co., Ltd
IPB60R600C6
Infinen
180
1.345
SUNTOP SEMICONDUCTOR CO., LIMITED
IPB60R600C6
INFLNEON
390120
2.45
Heisener Electronics Limited
IPB60R600C6
Infineon Technologies A...
10000
3.555
GOTSSON TECHNOLOGY (HONG KONG) CO., LIMITED
IPB60R600C6
INFINEON/IR
3200
4.66
HongKong Trusang Technology Co.,Ltd