Part Number | IPB64N25S320ATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 250V 64A TO263-3 |
Series | OptiMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 250V |
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 89nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 7000pF @ 25V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Rds On (Max) @ Id, Vgs | 20 mOhm @ 64A, 10V |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-3-2 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
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IPB64N25S320ATMA1
INFIENON
20825
1.65
Useta Tech (HK) Limited
IPB64N25S320ATMA1
Infinen
6610
2.7775
HK HEQING ELECTRONICS LIMITED
IPB64N25S320ATMA1
INFLNEON
35800
3.905
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
IPB64N25S320ATMA1
Infineon Technologies A...
1080
5.0325
E-Core Electronics Co.
IPB64N25S320ATMA1
INFINEON/IR
1000
6.16
STH Electronics Co.,Ltd