Part Number | IPB65R150CFDATMA1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Infineon Technologies AG |
Description | MOSFET N-CH 650V 22.4A TO-263 |
Series | CoolMOS |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 22.4A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2340pF @ 100V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 195.3W (Tc) |
Rds On (Max) @ Id, Vgs | 150 mOhm @ 9.3A, 10V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263 |
Package / Case | TO-263-3, D²ÂPak (2 Leads + Tab), TO-263AB |
Image |
IPB65R150CFDATMA1
INFIENON
2688
1.16
Shenzhen Hongying Micro Technology Co., Ltd
IPB65R150CFDATMA1
Infinen
19581
2.135
Useta Tech (HK) Limited
IPB65R150CFDATMA1
INFLNEON
3000
3.11
HK HEQING ELECTRONICS LIMITED
IPB65R150CFDATMA1
Infineon Technologies A...
20000
4.085
YK TECH ELECTRONIC CO., LIMITED
IPB65R150CFDATMA1
INFINEON/IR
55200
5.06
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED